Model/Brand/Package
Category/Description
Inventory
Price
Data
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Category: MOSpipeDescription: SOT-227 N-CH 300V 88A19581+$324.687610+$316.217450+$309.7237100+$307.4650200+$305.7710500+$303.51231000+$302.10062000+$300.6889 -
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Category: IGBTtransistorDescription: IGBT Module, Vishay's high-efficiency IGBT module comes with PT, NPT, and Trench IGBT technology options. This series includes single switch, inverter, chopper, half bridge or with custom configuration. These IGBT modules are designed to serve as primary switching devices in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drive, and power factor correction systems. Typical applications include: boost and buck converters, forward and double forward converters, half bridge, full bridge (H-bridge), and three-phase bridge. A wide range of industrial standard packaging types are available for direct installation on heat sinks, including PT, NPT, and Trench IGBT technologies. The low VCE (on) IGBT switching frequency ranges from 1 kHz to 150 kHz, with robust instantaneous performance and high isolation voltage up to 3500 V, 100% lead-free (Pb), and RoHS compliant low thermal resistance. The IGBT module, Vishay insulated gate level bipolar transistor or IGBT, is a three terminal power semiconductor device known for its efficient and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.62251+$404.849510+$394.288250+$386.1912100+$383.3748200+$381.2626500+$378.44621000+$376.68602000+$374.9258 -
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Category: IGBTtransistorDescription: Trans IGBT Module N-CH 600V 109A 4Pin SOT-22782351+$181.227410+$176.499750+$172.8751100+$171.6144200+$170.6689500+$169.40821000+$168.62022000+$167.8323 -
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Category: MOSpipeDescription: SOT-227 N-CH 1000V 25A21011+$241.702410+$235.397150+$230.5631100+$228.8817200+$227.6206500+$225.93921000+$224.88832000+$223.8374 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 1200V 120A 521000mW 4Pin SOT-22782831+$511.521210+$498.177150+$487.9467100+$484.3883200+$481.7195500+$478.16111000+$475.93712000+$473.7131 -
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Category: MOSpipeDescription: SOT-227 N-CH 500V 44A11381+$196.789210+$191.655550+$187.7197100+$186.3508200+$185.3240500+$183.95511000+$183.09952000+$182.2439 -
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Category: IGBTtransistorDescription: Boost chopper NPT IGBT95471+$293.322510+$285.670650+$279.8041100+$277.7636200+$276.2332500+$274.19271000+$272.91742000+$271.6421 -
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Category: IGBTtransistorDescription: Power Semiconductor Power Modules RF Power MOSFETs99541+$235.651110+$229.503750+$224.7907100+$223.1513200+$221.9219500+$220.28261000+$219.25802000+$218.2334 -
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Category: MOSpipeDescription: Power MOS 7TM is a new generation of low loss, high voltage, N-channel enhanced power MOSFET. Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.98151+$367.145610+$357.567850+$350.2249100+$347.6709200+$345.7553500+$343.20131000+$341.60502000+$340.0087 -
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Category: MOSpipeDescription: Power MOS 7TM is a new generation of low loss, high voltage, N-channel enhanced power MOSFET. Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.4336 -
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Category: MOSpipeDescription: Power MOSFET V is a new generation of high-voltage N-channel enhanced power MOSFET. Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.28631+$333.013610+$324.326250+$317.6660100+$315.3494200+$313.6119500+$311.29531000+$309.84742000+$308.3995 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 600V 148A 500000mW 4Pin SOT-22734981+$182.843110+$178.073350+$174.4164100+$173.1445200+$172.1905500+$170.91861000+$170.12362000+$169.3286 -
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Category: IGBTtransistorDescription: ISOTOPStep-down chopper channel IGBT ISOTOP Buck chopper Trench IGBT75201+$221.050710+$215.284250+$210.8631100+$209.3254200+$208.1721500+$206.63441000+$205.67332000+$204.7122 -
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Category: MOSpipeDescription: Trans MOSFET N-CH 1kV 34A 4Pin SOT-22714291+$547.866910+$533.574750+$522.6174100+$518.8061200+$515.9477500+$512.13651000+$509.75442000+$507.3724 -
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Category: MOSpipeDescription: Trans MOSFET N-CH 500V 48A 4Pin SOT-22792611+$550.093310+$535.743050+$524.7412100+$520.9144200+$518.0444500+$514.21771000+$511.82592000+$509.4342 -
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Category: MOSpipeDescription: Trans MOSFET N-CH 200V 97A 4Pin SOT-22769451+$213.896610+$208.316650+$204.0387100+$202.5507200+$201.4348500+$199.94681000+$199.01682000+$198.0868 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 1200V 64A 284000mW 4Pin SOT-22789761+$334.806410+$326.072350+$319.3762100+$317.0471200+$315.3003500+$312.97121000+$311.51552000+$310.0598 -
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Category: IGBTtransistorDescription: ISOTOPStep-down chopper channel IGBT ISOTOP Buck chopper Trench IGBT97661+$256.875510+$250.174450+$245.0369100+$243.2499200+$241.9097500+$240.12281000+$239.00592000+$237.8891 -
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Category: IGBTtransistorDescription: ISOTOPBoost chopper NPT IGBT ISOTOP Boost chopper NPT IGBT35741+$158.281410+$154.152350+$150.9867100+$149.8856200+$149.0598500+$147.95871000+$147.27052000+$146.5823 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 600V 151A 462000mW 4Pin SOT-22776881+$245.100710+$238.706750+$233.8047100+$232.0997200+$230.8209500+$229.11581000+$228.05022000+$226.9845 -
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Category: IGBTtransistorDescription: Power Semiconductors Power Modules54661+$274.028910+$266.880350+$261.3997100+$259.4935200+$258.0637500+$256.15751000+$254.96602000+$253.7746 -
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Category: IGBTtransistorDescription: Power Semiconductors Power Modules69301+$265.778810+$258.845450+$253.5299100+$251.6810200+$250.2943500+$248.44541000+$247.28982000+$246.1343 -
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Category: IGBTtransistorDescription: Power Semiconductors Power Modules17471+$293.917010+$286.249650+$280.3713100+$278.3266200+$276.7931500+$274.74851000+$273.47062000+$272.1927 -
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Category: IGBTtransistorDescription: IGBT Module, Vishay's high-efficiency IGBT module comes with PT, NPT, and Trench IGBT technology options. This series includes single switch, inverter, chopper, half bridge or with custom configuration. These IGBT modules are designed to serve as primary switching devices in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drive, and power factor correction systems. Typical applications include: boost and buck converters, forward and double forward converters, half bridge, full bridge (H-bridge), and three-phase bridge. A wide range of industrial standard packaging types are available for direct installation on heat sinks, including PT, NPT, and Trench IGBT technologies. The low VCE (on) IGBT switching frequency ranges from 1 kHz to 150 kHz, with robust instantaneous performance and high isolation voltage up to 3500 V, 100% lead-free (Pb), and RoHS compliant low thermal resistance. The IGBT module, Vishay insulated gate level bipolar transistor or IGBT, is a three terminal power semiconductor device known for its efficient and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.84091+$638.403410+$616.003350+$613.2033100+$610.4033150+$605.9232250+$602.0032500+$598.08321000+$593.6032 -
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Category: IGBTtransistorDescription: IGBT Module, Vishay's high-efficiency IGBT module comes with PT, NPT, and Trench IGBT technology options. This series includes single switch, inverter, chopper, half bridge or with custom configuration. These IGBT modules are designed to serve as primary switching devices in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drive, and power factor correction systems. Typical applications include: boost and buck converters, forward and double forward converters, half bridge, full bridge (H-bridge), and three-phase bridge. A wide range of industrial standard packaging types are available for direct installation on heat sinks, including PT, NPT, and Trench IGBT technologies. The low VCE (on) IGBT switching frequency ranges from 1 kHz to 150 kHz, with robust instantaneous performance and high isolation voltage up to 3500 V, 100% lead-free (Pb), and RoHS compliant low thermal resistance. The IGBT module, Vishay insulated gate level bipolar transistor or IGBT, is a three terminal power semiconductor device known for its efficient and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.61431+$157.466110+$153.358250+$150.2089100+$149.1135200+$148.2919500+$147.19651000+$146.51192000+$145.8273
